| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b73bb5b611ad02b686a7967bc6ca3412 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0016
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2231
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3059
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-327 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0087
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0421
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-347
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-00 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-327
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-223 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-347 |
| filingDate |
1994-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5e34be175a594ea2c37eaa0716b3ce4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7e0f5e8489a69e0baa169a0bf6645679
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d5eaae854b5cbd48948b1d085f33771
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc828c854dc187bc877c3b69977e0aac |
| publicationDate |
1995-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0683924-A1 |
| titleOfInvention |
Graded composition ohmic contact for p-type ii-vi semiconductors |
| abstract |
A II-VI laser diode including a substrate, a device layer of p-type II-VI semiconductor, and electrode and an ohmic contact layer between the electrode and device layer. The ohmic contact layer comprises a graded composition semiconductor compound including ZnTe. The relative amount of ZnTe in the semiconductor compound increases with increasing distance of the ohmic contact layer from the device layer. In a first embodiment the ohmic contact layer comprises a graded composition semiconductor alloy including the semiconductor compound of the device layer and ZnTe. The amount of ZnTe in the alloy increases with increasing distance of the ohmic contact layer from the device layer in the first embodiment. In a second embodiment the ohmic contact layer includes layers of ZnTe spaced between layers of the semiconductor compound of the device layer. The thickness of the layers of ZnTe increases, or the thickness of the layers of the semiconductor compound of the device layer decreases, with increasing distance of the ohmic contact layer from the device layer in the second embodiment. |
| priorityDate |
1993-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |