http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0677866-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d1da4afba068d10fd30ae0bd07aee222 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_54d600ecc035c6e5261c9690dd1d6a67 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38e4b503b1979a5d277324483132316a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3211 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 |
| filingDate | 1995-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f18bb3e2e44b110f20dc9e7434dd12d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3682ea83ba6ba44698f1f27d0ba4a1ab http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db8ff79820612a424a9493187d35ebef |
| publicationDate | 1995-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0677866-A1 |
| titleOfInvention | Apparatus for forming film |
| abstract | This invention relates to film forming apparatus for forming an insulating film, for example, by the CVD method using a reaction gas in the activated form. It is aimed at simplifying the apparatus in construction, ensuring impartation of high quality to the produced film, enhancing the efficiency of the formation of plasma, or exalting the uniformity of the produced film as by repressing the dispersion of the film thickness. The film forming apparatus comprises first gas discharge means 8 for discharging first reaction gas into a plasma forming part 1, gas activating means for activating said first reaction gas, second gas discharge means 9 for discharging second reaction gas on a substrate in a film forming part 7, and said gas discharge means 9 being provided with gas discharge pipes 22a and 22b, 22c and 22d, 22e and 22f, or 22g and 22h in walls of which a plurality of gas discharge holes are formed, whereby said second reaction gas is discharged from the gas discharge holes to contact said activated first reaction gas and is activated so that a film is formed on said substrate through reaction of said first and second reaction gas. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1226286-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1226286-A4 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7972946-B2 |
| priorityDate | 1994-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.