| abstract |
A ceramic substrate for hard disks, thin film chip capacitors, and hybrid ICs, of titanium oxide or aluminum oxide, has an extremely small number of pores of larger than 3 mu m diameter in the surface. The substrate is fabricated by burning finely powdered high-purity titanium oxide or high-purity aluminum oxide in the air, an inert atmosphere at 1,100-1,300 DEG C, or a reducing atmosphere at 1,200-1,400 DEG C and then, subjecting it to an HIP process. |