| abstract |
A thin film sensor element includes a sensor holdingnsubstrate having an opening part and a multilayer film adherednthereon at least consisting of an electrode film A, an electrodenfilm B having (100) plane orientation, and a piezoelecticndielectric oxide film present between the electrode film A andnthe electrode film B. As a result, a thin film sensor elementnwhich is small, light, highly accurate, and inexpensive can benattained which can be used for an acceleration sensor element andna pyroelectric infrared sensor element. n On the surface of a flat plate KBr substrate 1, a rock-saltncrystal structure oxide of a conductive NiO 12 is formed byna plasma MOCVD method whose vertical direction is crystal-orientednto 〈100〉 direction against the substrate surface. Bynmeans of a sputtering method, a PZT film 4 is formed by annepitaxial growth on that surface, and a Ni-Cr electrode film 15nis formed thereon. Next, the multilayer film structure isnreversed and adhered to a sensor substrate 7 having an openingnpart with an adhesive 20. After a connection electrode 19 isnconnected, the whole structure is washed with water, therebynremoving the KBr substrate 1. |