http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0665307-A2

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
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filingDate 1995-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f74fb7299ca776319606a5390af67bd2
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publicationDate 1995-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0665307-A2
titleOfInvention Film forming CVD-apparatus and method effected by the same
abstract A plasma generating chamber (1) and a film forming chamber (7) are provided with a film forming apparatus of the present invention. A first reaction gas is introduced into the plasma generating chamber (1) to be plasmanized, and a second reaction gas is introduced into the film forming chamber (7). A wafer (15) on which a film is grown is placed in the lower part of the film forming chamber (7) while being biased by a voltage. The second reaction gas which is introduced into the film forming chamber (7) is activated by the first reaction gas in plasma state and is deposited on the wafer by virtue of a chemical reaction to thus form the film on the wafer.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1054433-A1
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priorityDate 1994-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 30.