| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5cb907719b87723dfcacf23516cbb0b5 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0062 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate |
1995-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e1d04fd07a7439d43d73bbd6abf7b58b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a635edf4cc0ab603619620c068ad1727
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d714702e3fa6d570eba2b9e0073c4719 |
| publicationDate |
1995-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0664568-A1 |
| titleOfInvention |
Process for the fabrication of a segmented monocrystalline wafer |
| abstract |
Part of the surface of the first structure (1-5) is protected by an oxide deposit (6), and the unprotected layers are attacked until a stop layer (2) is reached. Then, layers are reformed in the attacked area by epitaxial deposition by molecular jets (7-9), giving one of the redeposited layers (8) a composition different from that of the adjacent layer (4).n n n Application to the manufacture of semiconductor lasers with integrated modulator. |
| priorityDate |
1994-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |