| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02197
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31691
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1279
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B13-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-49 |
| filingDate |
1994-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7229eae60eec275a053e5979eb426744
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9855f95649e4c9d74b554bfb79b75034
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2a4a6ffcc88edb163c6460bd1d8ad03 |
| publicationDate |
1995-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0650187-A1 |
| titleOfInvention |
A method for forming a strong dielectric film by the sol-gel technique and a method for manufacturing a capacitor |
| abstract |
A method for forming a PZT strong dielectric film by the sol-gel technique, in which the thickness of the film is substantially no greater than 1000 Å. In another aspect, the drying temperature of the raw material sol-gel solution for forming the PZT dielectric film is maintained within the range of 130-200°C, and is particularly set lower than the boiling point of the stabilizer contained in the sol-gel raw material and higher than the boiling point of the solvent contained in the sol-gel raw material. As a result of performing the oxidative sintering treatment at a temperature at which perovskite crystals form, it becomes possible to readily form thin films exhibiting a (100) crystal orientation in particular. Additionally, completely crack-free thick films can be formed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2788167-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0687750-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/BG-65440-B1 |
| priorityDate |
1993-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |