| abstract |
A process is disclosed for pretreating aluminum-bearing surfaces in a vacuum deposition chamber after a previous step of cleaning the chamber, and prior to depositing tungsten silicide on substrates in the chamber, which first comprises treating the aluminum-bearing surfaces with a mixture of silane and a tungsten-bearing gas, such as WF₆, to form a first deposition of a sliane-based tungsten silicide on the aluminum-bearing surfaces. In a preferred embodiment, the process further comprises subsequently treating the already coated aluminum-bearing surfaces of the chamber in a second step with a mixture of a tungsten-bearing gas, such as WF₆, and a chlorine-substituted silane such as dichlorosilane (SiH₂Cl₂), monochlorosilane (SiH₃Cl), or trichlorosilane (SiHCl₃), to form a chlorine-substituted silane-based tungsten silicide deposition over the previous deposited silane-based tungsten silicide. |