| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_33b011e77b33662b8bf1f2ff2de7b661 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-4068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-4056
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1071
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-4031
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-101 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02241
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-40 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 |
| filingDate |
1993-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74f100334b4903ddf51f863bfab40070
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cff69562d1f6d6b93d2e7a19bad38dbf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d24b1882f73048df4eee6bffff4daaeb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5876840f2bed5228e1ffc29b6803ee1 |
| publicationDate |
1995-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0634052-A1 |
| titleOfInvention |
Semiconductor optical devices and techniques |
| abstract |
The disclosure is directed to improved techniques and devices employing an aluminum-bearing III-V semiconductor material and a native oxide of aluminum that is formed in the semiconductor material. In a form of the disclosure, two linear arrays of end-coupled minicavities, defined by a native oxide of an aluminum-bearing III-V semiconductor material, are arranged side by side to obtain a two dimensional array, with resultant lateral coupling between the linear arrays. The two dimensional array exhibits mode switching and multiple switching in the light power (L) versus current (I) characteristic (L-I) with increasing current. In another form of the disclosure, a stripe laser (1210) is transversely coupled (or side-coupled) with a linear array of end-coupled minicavities (1221-1275). Bistability and switching are demonstrated in the light versus current (L-I) characteristic of a native-oxide-defined structure of this type. |
| priorityDate |
1992-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |