http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0626100-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_50e6fee10adc7878b9b2f0bb19214525 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-764 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-764 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| filingDate | 1993-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_56666473d158a831c16d95e5a93cb5a4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d67f4f637d5e958d48d9264c0594e6a |
| publicationDate | 1994-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0626100-A1 |
| titleOfInvention | Process for producing a semiconductor structure |
| abstract | A vertical semiconductor component (13) can be integrated on a common semiconductor body (1) near the lateral semiconductor components (13), the latter being isolated from the vertical semiconductor component (14) by means of a PN junction. This way of isolating has, among other things, the disadvantage of requiring a lot of space for spreading the area of the space charge of the PN junction. This is why it is advantageous to carry out the insulation in another way. To this end, the partial structures (7) containing the lateral semiconductor components (13) are surrounded laterally by insulating walls (6). The walls start from a first surface (2) of the semiconductor body (1) to reach a certain depth and enter the semiconductor body. In the area of partial structures (7), the semiconductor body (7) to its thickness reduced by a second surface (3), so as to form a hollow (9) extending to the insulating walls (6) . Several vertical components can be integrated into the semiconductor body, apart from the partial structures (7). |
| priorityDate | 1992-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24261 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707758 |
Total number of triples: 20.