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filingDate 1994-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e9dbb92dbc691c1c16b8b8a9dbd422c
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publicationDate 1994-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0621355-A2
titleOfInvention Process for manufacturing a hole structure in a silicium substrate
abstract To produce a hole structure (6) in a substrate (1) made of n-doped, monocrystalline silicon, the substrate (1) is provided with pores (4) by electrochemical etching from a first main surface (2), which have a depth corresponding to the depth the hole structure (6). A mask (5) is generated on the first main surface (2) of the substrate (1) and defines the cross section of the hole structure (6) parallel to the first main surface (2). With the aid of an etching which is selective with respect to mask (5), the hole structure (6) is produced by removing the silicon forming the side walls of the pores (4) which are not covered by the mask (5).
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