http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0617741-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e40ceab05afbe887909abf7467edd987 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4581 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-511 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-04 |
| filingDate | 1992-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1996-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_564535f998823d0d0c4fd0e77ea048b1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fcf672e12b0058553a1877bb74a524a2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f110e7c097677586151a39f02b56231f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_08df62d92c9521777af5572184ee4efd |
| publicationDate | 1996-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0617741-B1 |
| titleOfInvention | Nucleation enhancement for chemical vapor deposition of diamond |
| abstract | A method and apparatus for enhancing the nucleation of diamond by pretreating a substrate by electrically biasing a diamond film adjacent the substrate while exposing the substrate and the thus biased diamond film to a carbon-containing plasma. The bias pretreatment may be maintained for a time period in the range of about 1 hour to 2 hours to achieve a high diamond nucleation density. Alternatively, the biasing may be continued until diamond film formation is indicated by a change in reflectivity of the surface of the substrate. The biasing pretreating may be used to nucleate diamond heteroepitaxially on a substrate having a surface film formed of a material having a relatively close lattice match to diamond, such as β-silicon carbide. The apparatus includes a laser reflection interferometer to monitor the surface of the substrate. The laser reflection interferometer is used to monitor growth of the diamond film and cooperates with a controller to control the processing parameters during the diamond growing process. |
| priorityDate | 1991-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.