| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-388
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-388
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-037
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
1993-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02adf2c5e52ec80d384ceb15ace18d10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3457265ba235970c008594577f8954e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe4afd50d5f92b96b7a4f441d562385e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a750a624bc1c79f46d170b96868b8cf7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f176ab0a4733c12f98051be6a6f06a1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd026676419a463c0395c234e2cb79de |
| publicationDate |
1994-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0599762-A1 |
| titleOfInvention |
Method of forming sub-half micron patterns with optical lithography using bilayer resist |
| abstract |
A method is provided for forming a microlithographic relief image having a width of less than one half micron in a bilayer resist composition. The resist composition comprises a single component, silicon-containing photoimageable layer consisting of a hydroxyaromatic silsesquioxane polymer partially esterified with diazonaphthoquinone groups, and a polymeric underlayer having a high optical density and a refractive index similar to the refractive index of the overlaying resist. The method provides for the formation of a relief image in the top layer using an i-line (365 nm) or deep ultra violet (170 to 300 nm) light source, followed by O₂ RIE transfer of the relief image into the polymeric underlayer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-4414808-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2709869-A1 |
| priorityDate |
1992-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |