http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0596705-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_79b5f9d76648dfc226a261cfb970de9c |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-1646 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-1629 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-1628 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-1631 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-1623 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-1642 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-1604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-14129 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B41J2-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B41J2-16 |
| filingDate | 1993-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8df94b29e4a8748e7c9de3544f46eee0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4616961a7a24c083c32e4f3eec8f4e66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_794dcd3e43f42e439a9e736ef341d057 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed8a81ef8c8ec5312821c67dae15e1be |
| publicationDate | 1994-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0596705-A2 |
| titleOfInvention | Heater element for a thermal ink jet printhead |
| abstract | The resistors (8) of heater elements (2) are formed by chemical vapor deposition of polycrystalline silicon at at least one of a flat temperature profile of 620°C and a ramped temperature profile of 620°C to 640°C in a first embodiment. Such method of forming the polysilicon result in a predominantly uniform grain size of approximately 1000Å, where grain size can vary between 200Å to 1000Å Alternatively, the resistors (8) are formed by chemical vapor deposition of amorphous polysilicon at at least one of a flat temperature profile at a temperature below 580°C and a ramped temperature profile of 565°C to 575°C. In the alternative embodiment, the polysilicon has a grain size of at least 1000Å. During the ion implantation of either p-type or n-type dopants into the polysilicon, a flood gun located in an ion implanter emits low energy electrons to neutralize the build-up of positive charges on the polysilicon surface. The resulting heating elements (2) comprise a resistive layer (8) having substantially uniform grain size formed on top of a substrate (4), contacts (16,18) coupled to the resistive layer (8), an insulation means (20,22) formed on top of the resistive layer (8) to prevent contact between the layer (8) and the ink, and an insulative film (26) covering the contacts (16,18), portions of the insulation means (20,22) and the resistive layer (8). The sheet resistances of the resistors in the printhead vary less than 3% and preferably less than 1%. Such low variations in sheet resistance prevent undervoltage and overvoltage from being applied to the resistors and extend the lifetime of the heater element and thus, the printhead. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0729834-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6578951-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0729834-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0924079-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0924079-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100555739-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0917956-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0917956-A3 |
| priorityDate | 1992-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.