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filingDate 1991-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e0dd1de11b5a2792be3d499f2aad0d1
publicationDate 1994-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0589869-A1
titleOfInvention Gas phase selective beam deposition
abstract A method and apparatus are used to selectively deposit a layer of material from a gas phase to produce a part formed from a plurality of deposited layers. The apparatus includes a computer which controls a directed beam of laser energy into a chamber which essentially contains the gas phase, preferably producing photodecomposition or thermal decomposition of the gas phase and selectively depositing material within the limits of the desired cross sections. of the room. In each cross section, the target of the laser beam scans a target area and the beam is switched so as to deposit material within the limits of the cross section. Each subsequent layer is connected to the layer immediately preceding it, so as to produce a part formed from a plurality of connected layers. In another embodiment of the invention, a gas phase is condensed on a surface and a laser beam is used to evaporate, transform, activate or selectively decompose material in each layer. The next layer is condensed and the step of evaporation, transformation, activation or decomposition is repeated in order to produce a part formed from a plurality of connected layers. The apparatus described preferably includes a computer controlled laser generation and scanning system which directs a laser beam into a chamber containing at least one gas phase, which controls the direction of the beam and which selectively causes deposition or evaporation of material to produce a part.
priorityDate 1989-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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