http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0583128-A2

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filingDate 1993-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb13db6a8231ddc26997be54c37d8209
publicationDate 1994-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0583128-A2
titleOfInvention Semiconductor laser with integrated phototransistor for dynamic power stabilization
abstract A diode laser (82-90,92b,94b,96) of the buried heterostructure type with transverse injection and a lateral bipolar transistor structure (82-90,92a,94a) are monolithically and coaxially formed in the same set of semiconductor layers (72-80) to make an integral laser device that emits a constant level of optical power stabilized against unpredictable variations. The base region (86a) of the transistor structure is formed coaxially with the laser cavity (86b), so that laser optical power passes into or through the transistor base (86a). Electrical feedback is provided from the transistor to the laser via a resistor (110) between the collector (94a) of the transistor and the anode (96) of the laser, thereby controlling the current delivered by an external current source to the laser.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0780937-A1
priorityDate 1992-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 23.