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filingDate 1993-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1994-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0582986-A2
titleOfInvention Semiconductor device and method of manufacturing the same
abstract A semiconductor device has a substrate composed of a semiconductor which has one of sphalerite and diamond crystal structures. The substrate has a plane orientation inclined at 0.5° to 15° with respect to one of {111} and {110} planes indicated by Miller indices. A first semiconductor layer is formed on the substrate. The first semiconductor layer has a sawtooth-shaped first periodic structure consisting of one of the {111} and {110} planes indicated by the Miller indices and at least one plane indicated by another index. A second semiconductor layer is formed on the first semiconductor layer. The second semiconductor layer has a second periodic structure having a phase shifted from a phase of the first periodic structure. n An embodiment of the semiconductor device is a distributed feedback diode laser incorporating a quantum-well or quantum-wire structure.
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priorityDate 1992-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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