| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e21de07fa18fc54e2150daffc14654 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-106
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-122 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-029
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
| filingDate |
1992-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_082ef80ac91a9d8bb6e7bb77f3a15baf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b22fb3279d1dc84cff6f816f85d1e28c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a34e7eb589f810dd281c60b5bfc52fe8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_264206de02bb22900f6e751ac079337a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5be7f942e9066988b313340a388ae20 |
| publicationDate |
1993-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0542523-A1 |
| titleOfInvention |
Positive resist material |
| abstract |
A positive resist material for high energy-sensitive positive resists which can be developed in aqueous alkali solution comprises (A) a polyhydroxystyrene resin wherein some hydroxyl groups are substituted by t-butoxycarbonyloxy groups; (B) a solution blocking agent; and (C) an onium salt. The solution blocking agent contains at least one butoxycarbonyloxy group per molecule; the onium salt is bis(p-t-butylphenyl) iodinium trifluoromethylsulfonate (1):n n and the weight proportions of (A) , (B) , (C) are given by the relations: 0.07≦B ≦0.40; 0.005 ≦C ≦0.15; 0.55≦A; and A + B + C = 1. As the resist has low absorption at the exposure wavelength of a KrF exima laser, a fine pattern having vertical walls is easily formed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6929896-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0558272-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102016221346-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018078108-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11292859-B2 |
| priorityDate |
1991-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |