| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_37f4922dfb7777b019e504b885211b8e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-113
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-615
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-154
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-151 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
1991-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1994-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f678fd107c1943022c2e8ae3471038a1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_76b8495f9132e44564e6c8ca1f2ee0db
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ac3da35958879db7966ab5c994ca426 |
| publicationDate |
1994-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0537240-B1 |
| titleOfInvention |
Mis-structure thin-film field effect transistors wherein the insulator and the semiconductor are made of organic material |
| abstract |
An MIS-structure insulated-gate thin-film field effect transistor (TFT) includes a semiconductor thin film placed between a source and a drain and in contact with one side of a thin film of insulating material, the other side of which is in contact with a conductive gate. Said semiconductor consists of one or more polyconjugated organic compounds having a specified molar mass and characterized in that they contain at least eight conjugations, and in that they have a molar mass no higher than about 2,000. Said insulating thin film is made of an insulating organic polymer having a relative permeability of at least 5, and said TFT can be used as a switching or amplifying element. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6518949-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6750473-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6498114-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6312971-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6738050-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6473072-B1 |
| priorityDate |
1990-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |