| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7317
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-74 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-732
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-74
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 |
| filingDate |
1992-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3cbfdfcc12446cb2d07d42a20b7f6a98 |
| publicationDate |
1993-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0530497-A1 |
| titleOfInvention |
Bipolar transistor |
| abstract |
A bipolar transistor with an emitter 4, a base 3 and a collector 2 is described having a thin subcollector (22) formed from alternating polycrystalline semiconductor material and silicide material disposed over an insulating layer (21). Because the subcollector is thin the transistor is less sensitive to alpha-particle events. The transistor has enhanced inverse current gain since there is a polycrystalline contact (9) to the incerse emitter. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2344689-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6426667-B1 |
| priorityDate |
1991-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |