| abstract |
Metallic impurities are prevented from adhering to the surface of a semiconductor substrate when the substrate is cleaned with a basic aqueous solution of hydrogen peroxide. The cleaning liquid contains a chelating agent having at least two phosponic acid groups. Even when the cleaning liquid is contaminated by the metallic impurities, since they are prevented from adhering to the surface of the substrate, the characteristic of the semiconductor device made of the substrate is stabilized. |