| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-74
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0623 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K17-73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K17-732
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K17-60 |
| filingDate |
1992-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7dd93c721c07e6db6ca6bc57e118bfda
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_edbd68450149bab32047b5ba33412081 |
| publicationDate |
1992-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0520831-A2 |
| titleOfInvention |
Gated thyristor and process for its simultaneous fabrication with an integrated circuit |
| abstract |
An integrated process is shown for the fabrication of one or more of the following devices: (n-) and (p-) channel low-voltage field-effect logic transistors (403); (n-) and (p-) channel high-voltage insulated- gate field-effect transistors (405) for the gating of an EEPROM memory array or the like; a Fowler-Nordheim tunneling EEPROM cell (406); (n-) and (p-) channel drain-extended insulated-gate field-effect transistors (407); vertical and lateral annular DMOS transistors (409); a Schottky diode (411); and a FAMOS EPROM cell (412). A "non-stack" double-level poly EEPROM cell with enhanced reliability is also disclosed. n A thyristo circuit (Fig. 6a) and several gated thyristor integrated structures (Fig.7g, Fig.10, Fig.13, Fig.35) are disclosed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-19611942-C2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6507070-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114334956-A |
| priorityDate |
1991-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |