http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0515416-A1

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filingDate 1991-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f19e810db96f196c3fc5e14a9e334b0
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publicationDate 1992-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0515416-A1
titleOfInvention Integrable, capacitive pressure sensor and method for producing the same.
abstract A method of manufacturing an integratable capacitive pressure sensor comprises the following steps, from a semiconductor substrate: application of a separation layer (2), precipitation of a polycrystalline semiconductor layer (4), doping of the polycrystalline semiconductor layer (4) and removal of the separation layer (2) by pickling. In order to obtain a pressure sensor compatible with CMOS circuits and to increase the accuracy of the measurement, a semiconductor area (7) is isolated from the semiconductor substrate (1) and an insulating layer (8) is applied to the semiconductor area (7) isolated. The polycrystalline semiconductor layer (4) is arranged on the insulating layer (2), above the insulated semiconductor layer (7).
priorityDate 1990-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 23.