| abstract |
Composition essentially composed of doped crystalline MTiOXO4 (where M is chosen from the group composed of K, Rb and Tl, X is chosen from the group composed of P and As) which contain at least approximately a total of at least 100 ppm a dopant selected from the group consisting of Ga, Al and Si. The compositions have a low ionic conductivity, and can be prepared using an improved flux method, in which a dopant Ga, Al and / or If at flow, in a total amount of at least about 0.5 mol%, and the crystallization temperature is regulated in order to obtain a crystalline composition containing the desired amount of dopant. |