http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0511145-A3
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01B15-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-305 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01B7-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01B7-06 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01Q60-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-305 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01B7-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01B15-02 |
| filingDate | 1992-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1992-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0511145-A3 |
| titleOfInvention | Method for determining the thickness of an interfacial polysilicon/silicon oxide film |
| abstract | A method and apparatus for determining the thickness of an ninterfacial oxide film intermediate to a polysilicon layer nof a first conductivity type and a silicon substrate of a nsecond conductivity type supporting a p-n junction. Radiant nenergy, preferably in the form of light, is directed non to the top surface of the polysilicon layer thereby nstimulating carriers which concentrate at the interfacial noxide film, allowing the excited carriers to diffuse nacross the oxide film, and creating a short circuit, the nmagnitude of which is inversely related to the thickness nof the interfacial oxide film. |
| priorityDate | 1991-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.