| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c8e6a13e4ae501eb40decf5732cf09c6 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-126 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28575 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 |
| filingDate |
1992-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce9eb1e43f097a128467875c7f9d7e28 |
| publicationDate |
1992-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0510858-A1 |
| titleOfInvention |
Method of selectively forming a TiNx layer by MOCVD, on a semi-conductor device |
| abstract |
Disclosed is a method that comprises selective deposition of TiN x (13) on III-V compound semiconductor material (11). The TiN x can advantageously be used as contact metal. Exemplarily, deposition is by rapid thermal low pressure (RT-LP) MOCVD using dimethylamidotitanium with Hâ‚‚ carrier gas. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9954923-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6204560-B1 |
| priorityDate |
1991-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |