http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0497566-A3
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C7-112 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C7-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01C7-112 |
| filingDate | 1992-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1992-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0497566-A3 |
| titleOfInvention | Voltage non-linear resistor |
| abstract | A ZnO₂ voltage non-linear resistor contains, nas additive ingredients: 0.4-1.5 mol.% bismuth noxides as Bi₂O₃, 0.3-1.5 mol.% cobalt oxides as Co₂O₃, n0.2-1.0 mol.% manganese oxides as MnO₂, 0.5-1.5 mol.% nantimony oxides as Sb₂O₃, 0.1-1.5 mol.% chromium oxides nas Cr₂O₃, 0.4-3.0 mol.% silicon oxides as SiO₂, n0.5-2.5 mol.% nickel oxides as NiO, 0.001-0.05 mol.% naluminum oxides as Al₂O₃, 0.0001-0.05 mol.% boron oxides nas B₂O₃, 0.0001-0.05 mol.% silver oxides as Ag₂O, and n0.0005-0.1 mol.% zirconium oxides as ZrO₂, which bismuthoxides ncontain 30 wt.% of a γ-type crystalline phase. n A small-sizable ZnO₂ voltage non-linear resistor nhaving a higher varistor voltage, contains the same ingredients with the same namounts as above except that the amount of SiO₂ lies in the range of n4.0-10.0 mol.%. |
| priorityDate | 1991-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.