| abstract |
A method for fabricating Josephson integrated circuits and the circuit is described incorporating the steps of depositing layers of different materials to form a trilayer Josephson junction, etching to define a plurality of trilayer areas (22, 23, 24), depositing dielectric material thereover, and chemical-mechanical polishing to planarize the dielectric material down to provide a coplanar surface (55) with the tops (56, 57, 58) of the trilayer areas for subsequent interconnection. The invention overcomes the problem of poor quality Josephson junctions, low Vm's, and crevices or gaps in the upper coplanar surface between the trilayer area and the surrounding dielectric material. |