| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K17-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-263 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K17-73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K17-18 |
| filingDate |
1991-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10afe5790fedf3dc8c41965ce63d841b |
| publicationDate |
1992-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0472902-A2 |
| titleOfInvention |
Silicon controlled rectifier gate conduction detector |
| abstract |
An apparatus and method relative to the operation of a silicon controlled rectifier for providing a determination when the SCR is completely off and capable of blocking an applied potential. The technique described senses the amplitude of the SCR voltage at the gate terminal (32) in reference to the cathode. After the driving signal (A) to the SCR is removed, the gate voltage in reference to the cathode, is monitored. A predetermined threshold voltage level is compared in a comparing means (IC2) to the measured gate to cathode voltage to provide a logical output level to indicate when the gate voltage places the SCR in a non-conductive off state. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102279335-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103941181-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104868585-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9537348-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103941181-A |
| priorityDate |
1990-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |