| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-06255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0261
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0622
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-06206
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34313
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34306 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-04254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0612 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-0625
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-062 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042 |
| filingDate |
1991-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1bac271313dc1f9b2883a0fcbdf199e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96005bcd3aca4df0614f00afbf736c6f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98b1362ee8bbec318586d9a5d67ace7f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e77467a95ddfd0c3f7509f6c4e874d1 |
| publicationDate |
1992-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0465914-A2 |
| titleOfInvention |
Wavelength tunable laser diode |
| abstract |
A wavelength tunable laser diode comprises a temperature variable heater (8) separated from an active layer (1) by a distance less than the thickness of a compound semiconductor substrate (3). Because the heater (8) is located very close to the active layer (1), the response time of temperature change is improved. That in turn widens the tunable range of the laser diode. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7674038-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105765799-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8351472-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-02054166-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2309335-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2309335-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8194710-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1841024-A1 |
| priorityDate |
1990-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |