| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7688
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76885 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
1991-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_331826059baa65854c87491fb19590d5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd4820ad09325c1156138251c318cc91 |
| publicationDate |
1992-01-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0463365-A2 |
| titleOfInvention |
Triple level self-aligned metallurgy for semiconductor devices |
| abstract |
A process is described which eliminates the need to account for mask alignment tolerances in forming vias for metallurgy by the use of a common vertical edge or common plane defined by a first mask representing a first level of interconnect. Subsequent masks for defining interconnecting vias and a second level of interconnect utilize at least one edge of the first mask pattern as a common element to define subsequent metal levels. The combination of an etch stop layer and an oversized second level mask enable the mask overlay to be eliminated. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7282440-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7282447-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7569485-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7315082-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2346009-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2346009-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8097514-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7871934-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7276448-B2 |
| priorityDate |
1990-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |