| abstract |
A semiconductor device, including a nickel layer (300) formed on a semiconductor substrate (1) and a solder layer (500) formed on the nickel layer, and a method of manufacturing such a device are disclosed. The percent ratio of an X-ray diffraction peak intensity of the <200> plane of the nickel layer to that of the <111> plane of the nickel layer is not less than 10%. The nickel layer is sputtered in a condition which a pressure of an argon discharge gas is at least 15 mTorr. The solder layer includes at least tin and lead, and the amount of tin is not more than 30% by weight. The adhesive strength of the resultant semiconductor device is strong. |