| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5198a2a21392d6cbc0bb4898b3fb3d29 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0641
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3492
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3435 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-46 |
| filingDate |
1991-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dba158160a254f7e7a98d2ae080d1073
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b543e2d5c814806b95771a28750203a2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a07ac011318a662a7bfaeda0df1e5d2c |
| publicationDate |
1991-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0459482-A2 |
| titleOfInvention |
Process for forming thin film having excellent insulating property and metallic substrate coated with insulating material formed by said process |
| abstract |
A dense insulating thin film having a remarkably improved insulating property can be formed by a process comprising a first step of forming a first portion of an insulating thin film on a substrate by a sputtering process without exposing the substrate to a plasma or while irradiating the substrate with low energy particles and a second step of forming a second portion of the insulating thin film on the first portion while exposing the substrate to a plasma or while irradiating the substrate with high energy particles, thereby forming said insulating thin film on the substrate. The insulating property in terms of the dielectric breakdown voltage is 100 V or more as determined in a film thickness of 1 µm or less and an area of 20 mm². |
| priorityDate |
1990-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |