| abstract |
A Schottky junction between diamond (2) and metal (3) is not so good that the diode using the Schottky junction has a big leakage reverse current and n-value is far bigger than 1. A surface of diamond on which a Schottky junction shall be formed is pretreated by oxygen plasma or halogen plasma. Pretreatment of the diamond by the oxygen or halogen plasma improves the diode properties ; decreasing reverse current, increasing forward current and decreasing the n-value nearer to 1. |