http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0453070-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9c18e37c7618354a1bf043ed5d94b7a5 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823456 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-761 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-761 |
| filingDate | 1991-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e21625aee6fb83c3ea0745bc89c5213e |
| publicationDate | 1991-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0453070-A2 |
| titleOfInvention | Method of manufacturing an intelligent power semiconductor device |
| abstract | An improved method is disclosed for manufacturing an intelligent power semiconductor device, which comprises sequential steps of forming an element forming region on a semiconductor substrate, forming a gate insulation film for a power transistor, forming a conductive layer for a gate electrode of power transistor on the gate insulation film, forming a tab region for the power transistor, forming a gate insulation film for a small signal transistor, introducing impurities into channel region of the small signal transistor to adjust the threshold voltage thereof, forming a conductive layer for a gate electrode of the small signal transistor, and forming a source electrode and a drain electrode for each of the transistors. Since the process of forming the tab region of the power transistor is followed by the process of introducing impurities into the channel region of the small signal transistor, the threshold voltage of the small signal transistor is not influence by the process of forming the tab region of the power transistor. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9733315-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5786252-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6818951-B2 |
| priorityDate | 1990-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419521555 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID25134 |
Total number of triples: 24.