| abstract |
A film forming method and an apparatus therefor, in which reactant gas and carrier gas set in 10 torr through several atms very higher than the conventional plasma CVD gas pressure are put in a plasma condition of high density by utilizing standing waves or progressive waves of the microwave in a predetermined space, and then neutral radicals and ions of reactant species based on the reactant gas are guided to a substrate, thereby high-speed forming a thin film thereon. |