| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7a6e38ebc2cd7b611d1e143c1d0145c5 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2201-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2201-3423 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J49-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J43-246
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J9-12 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J9-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J43-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J49-02 |
| filingDate |
1990-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04c467b48150aa8f96dbdabb99a293a4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_293d9cf43f474d4eaa0e4c833301be4d |
| publicationDate |
1991-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0413482-A2 |
| titleOfInvention |
Thin-film continuous dynodes |
| abstract |
The invention is directed to continuous dynodes formed by thin film processing techniques. According to one embodiment of the invention, a continuous dynode is disclosed in which at least one layer is formed by reacting a vapour in the presence of a substrate at a temperature and pressure sufficient to result in chemical vapour deposition kinetics dominated by interfacial processes between the vapour and the substrate. In another embodiment the surface of a bulk semiconductor or substrate is subjected to a reactive atmosphere at a temperature and pressure sufficient to result in a reaction modifying the surface of the substrate. In yet another embodiment a continuous dynode is formed by liquid phase deposition of a dynode material into the substrate from a supersaturated solution. The resulting devices exhibit conductive and emissive properties suitable for electron multiplication in CEM, MCP and MEM applications. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2423629-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0908917-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0908917-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2293042-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1670030-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1670030-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2423629-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7495211-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7270813-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1592041-A2 |
| priorityDate |
1989-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |