| abstract |
A field-emission type switching device includes a substrate (1, 2; 11) formed with a recess (6; 15) having a straight edge and serrated edge opposite to the straight edge. A gate electrode (5; 14) is formed at the bottom of the recess (6; 15). An emitter electrode (3, 12) is provided over the substrate (1, 2; 11) and formed with a serrated edge which is slightly off alignment with the serrate edge of the recess (6; 15) so as to provide an emitter overhanging portion (3a) overhanging the recess (6;15). Similarly, a collector electrode (4, 13) is provided over the substrate means (1, 2; 11) and formed with a straight edge which is slightly off alignment with the straight edge of the recess (6; 15) so as to provide a collector overhanging portion (4a) overhanging the recess (6; 15). |