| abstract |
The active matrix substrate for liquid crystal display device has a feature in that an even number of diode elemental devices (53) are formed per one picture element (52), and also the diode used comprises a first electrode layer (11.1)(11.3) formed on an electrically insulating substrate (10), a metal oxide semiconductor or a metal chalcogenide semiconductor layer (12) formed on said first electrode layer, and a second electrode layer (15) formed on said semiconductor layer, with one of said first electrode layer and said second electrode layer together with said semiconductor layer forming a Schottky junction, and the other of said first electrode layer and said second electrode layer together with said semiconductor layer forming an ohmic junction. In the active matrix substrate, picture elements can be driven at low voltage and high precision, and it has also the advantage that no vacuum film forming equipment is required to be used for formation of the semiconductor layer of the diode elemental device used. |