| abstract |
A photoresist coating for use in microlithography comprises a polymer of a monomer of the formulan n wherein X and Y are strong electron withdrawing groups and R⁴ is H or providing that X and Y are both -CN, R⁴ may be aliphatic hydrocarbyl, aryl or alkaryl. Preferred monomers are of the formulan n wherein R⁷ is a C₁-C₅ alkyl or C₂-C₅ alkenyl group, more particularly ethyl 2-cyanopenta-2,4-dienoate or allyl 2-cyanopenta-2,4-dienoate. n Methods for applying a resist coating by vapour deposition of these monomers and exposure to radiation are described. A positive or negative tone image can be produced, depending upon the imaging method employed. |