Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_040ec81c891acc3f3186f56cb99cf161 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-019 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-147 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28525 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-441 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
filingDate |
1990-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9b69153e34a5dcfddaec0c9470524a6e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98082424f6ec3cd180585dd5605f7d0a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_05abf7ef5c589eb3702c668c0408af6f |
publicationDate |
1990-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
EP-0404372-A2 |
titleOfInvention |
Method for forming polycrystalline silicon contacts |
abstract |
A method for fabricating integrated circuits is used to improve contacts between polycrystalline interconnect and underlying polycrystalline or monocrystalline silicon regions. After contact openings are formed, a layer of titanium (48) is deposited over the integrated circuit. The titanium is reacted in nitrogen to form a silicide layer only in the openings. Titanium nitride and unreacted titanium are then removed, and a layer of polycrystalline silicon (56) deposited and patterned. The silicide (50, 51, 52) layer between the polycrystalline interconnect and the underlying silicon ensures that a high quality contact is formed. |
priorityDate |
1989-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |