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filingDate 1990-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78ed5c70d42a44330fbcb53c4c3fcffa
publicationDate 1990-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0404101-A1
titleOfInvention Method for depositing silicon dioxide film and product
abstract A CVD method for depositing silicon dioxide on a geometric substrate such as a silicon wafer includes the steps of providing both a silicon source compound and a silicate source compound as combined reactants together with an oxidizing gas, the reactants being thermally dissociated in a CVD reactor for deposition and formation of the silicon dioxide film. The process may be carried out under a variety of pressures and/or temperatures. The silicon source compound preferably has the structuren wherein X₁-X₄ are free of oxygen next to their silicons and the silicate source compound has the structuren wherein at least one of the substituents Y₁-Y₄ includes an oxygen adjacent the silicon. A geometric device having a silicon dioxide film formed by the above process is characterized by tensile strength of about 0.05-3 x 10⁹, an etch rate of about 1,000-2,000 Å/min., step coverage of about 80-95% and ability to accept dopants.
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priorityDate 1989-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 38.