http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0404101-A1
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9362ef404872f84cfbb078702db3aee4 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 |
filingDate | 1990-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78ed5c70d42a44330fbcb53c4c3fcffa |
publicationDate | 1990-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | EP-0404101-A1 |
titleOfInvention | Method for depositing silicon dioxide film and product |
abstract | A CVD method for depositing silicon dioxide on a geometric substrate such as a silicon wafer includes the steps of providing both a silicon source compound and a silicate source compound as combined reactants together with an oxidizing gas, the reactants being thermally dissociated in a CVD reactor for deposition and formation of the silicon dioxide film. The process may be carried out under a variety of pressures and/or temperatures. The silicon source compound preferably has the structuren wherein X₁-X₄ are free of oxygen next to their silicons and the silicate source compound has the structuren wherein at least one of the substituents Y₁-Y₄ includes an oxygen adjacent the silicon. A geometric device having a silicon dioxide film formed by the above process is characterized by tensile strength of about 0.05-3 x 10⁹, an etch rate of about 1,000-2,000 Å/min., step coverage of about 80-95% and ability to accept dopants. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0481777-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0481777-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022083231-A1 |
priorityDate | 1989-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.