http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0403936-A2

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filingDate 1990-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_69cb39e13963a5ae13b973d17b74eb8e
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publicationDate 1990-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0403936-A2
titleOfInvention Method for producing a conductive oxide pattern
abstract A conductive oxide film (2) is formed on a substrate (1) at a low temperature. The formed conductive oxide film (2) is not very dense because of the low temperature. Therefore the formed conductive oxide film (2) can easily be etched by an etchant having a weak etching capability. And by the etching a pattern of the formed conductive oxide film (2) is produced. The patterned conductive oxide film is oxidized at a temperature in the range of 100-­400°C. In this way a conductive oxide pattern is produced in a shorter time in the method of the present invention than in a conventional method and the conductive oxide pattern produced by the method of the present invention has the almost same resistivity as the conductive oxide pattern produced by the conventional method and has an improved pattern edge and an improved reproducibility.
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priorityDate 1989-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 46.