| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 |
| filingDate |
1990-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86a37b3671cc5c479d31540a0a9acdaa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_476bddc0115a0251770309d6124b89bf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1eed75087924c15b5210262ed8add443
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b87e931d8956b93cfdce63ecd5b8df47
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a019ad0c9ae31d720d07866badf23e3e |
| publicationDate |
1990-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0394741-A2 |
| titleOfInvention |
Deep UV etch resistant system |
| abstract |
A photoresist system that can be structured well and is particularly suitable for the deep UV range is proposed, in which an increased etching resistance to a halogen-containing plasma is generated in the lithographically produced photoresist structures by treatment with a reagent. The reagent has a predominantly aromatic structure and carries reactive groups that are suitable under normal conditions for chemical reaction with other reactive groups of the photoresist. The photoresist has, in particular, anhydride or epoxy groups and is suitable for structuring with deep UV light. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5703186-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5616667-A |
| priorityDate |
1989-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |