| abstract |
The reference electrode of the present invention includes a silver layer (2) and an insulating hydrophobic material layer (5) which is formed by atomic beam sputtering and containing silver halide dispersed therein, on the surface of a conductive substrate (1). The resulting reference electrode is of a solid type, is almost free from outflow of silver halide, can be miniaturized easily, is not affected by ion concentration, provides a stable potential and has high durability. The conductive substrate (1) may be a field effect transistor having a gate insulator film and the layer (5) may be a laminate film obtained by laminating alternately a thin layer or layers of silver halide and a thin layer or layers of insulating hydrophobic material. |