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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-04
filingDate 1990-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dcd04ac2b08c4558ad2c7319183a70a7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42f3086ecf7e47588bd184e082b72a03
publicationDate 1990-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0386726-A1
titleOfInvention Method for producing single crystal diamond film
abstract A single crystal diamond film having good electri­cal characteristics is produced by a method which comprises steps of decomposing a raw material gas comprising a hydro­gen gas and a carbon-containing compound and epitaxially growing a single crystal diamond film on a single crystal substrate in a vapor phase, wherein a molar ratio of the carbon atoms in the carbon-containing compound to the hydro­gen is from 2:100 to 10:100 and a lattice constant of the single crystal substrate satisfies the following relation: n|(a - a₀)/a| x 100 ≦ 20      (I) nwherein a₀ is the lattice constant of diamond (3.567 Å) and a is a lattice constant of the single crystal substrate.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0612868-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0689233-A3
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-1321227-C
priorityDate 1989-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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