http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0385447-A2

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filingDate 1990-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47e00abfaa64b5609bfeedd0d6d69899
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publicationDate 1990-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0385447-A2
titleOfInvention Process for preparing of semiconductor device and pattern-forming coating solution used for this process
abstract A process for the preparation of a semiconductor device and a pattern-forming coating solution used for this process are disclosed. In this process, a coating solution formed by dissolving an α-methylstyrene/methyl α-chloroacrylate copolymer as a specific positive resist material in a specific solvent is coated on a layer to be etched, which is formed on a semiconductor substrate. In this process, penetration between the substrate and the resist of the resist into the clayer to be etched, and a formation of cracks in the resist after the etching, are prevented.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0424182-A3
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108779215-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108779215-B
priorityDate 1989-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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