| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34333
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-113 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32341
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0062
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| filingDate |
1989-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a26b3945df4e4a33ff7923cf540b63f9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42ce7c1b58cd154c3afab5dc0e287a7f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b13eec9438bbb2a6041835a9b59e1c0a |
| publicationDate |
1990-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0377940-A2 |
| titleOfInvention |
Compound semiconductor material and semiconductor element using the same and method of manufacturing the semiconductor element |
| abstract |
A compound semiconductor material includes Ga x Aℓ 1-x N (wherein 0 ≦ x ≦ 1) containing B and P and having a zinc blend type crystal structure. A compound semiconductor element includes Ga x Aℓ 1-x N (wherein 0 ≦ x ≦ 1) layer having a zinc blend type crystal structure. A method of manufacturing a compound semiconductor element includes the step of sequentially forming a BP layer and a Ga x Aℓ 1-x N (wherein 0 ≦ x ≦ 1) layer on a substrate so as to form a heterojunction by using a metal organic chemical vapor deposition apparatus having a plurality of reaction regions, and moving the substrate between the plurality of reaction regions. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7315050-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2343294-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03054929-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03054929-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-02097861-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0551721-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9630945-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0551721-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112758902-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6046464-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112758902-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03023095-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1003227-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0810674-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5670798-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5679965-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0810674-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1003227-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7622398-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-02097861-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9630945-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1777756-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6936490-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6150674-A |
| priorityDate |
1989-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |