http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0371796-A2

Outgoing Links

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-408
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-448
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-365
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
filingDate 1989-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cce6ac609653ea45887a2a8f03f39e46
publicationDate 1990-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0371796-A2
titleOfInvention Apparatus and process for chemical vapor deposition
abstract An apparatus for a chemical vapour deposition of a compound film on a substrate, comprising a plurality of gas-generating chambers (7a-7d) each containing an evaporating boat (2a-2d) for a solid source containing a component element of a compound film to be formed on a substrate, provided with a heating element (3a-3d) for heating and evaporating the solid source, having an inlet (4a-4d) for a carrier gas, and a gas outlet. The chambers (7a-7d) are arranged such that effective gas-generating portions (G) thereof are thermally isolated from each other. A gas-mixing chamber (M) for mixing gases from the gas-generating chamber is provided with heater element (3e) for heating a gas passing therethrough and has inlets for gases flowing from the gas-generating chambers and an outlet for a gas mixture. A film-growing chamber (F) for containing a substrate (5) on which a compound film to be formed by a gas phase reaction, is provided with a heating element (3e) for heating substrate, and has an inlet for a gas mixture flowing from the gas-mixing chamber and an exhaust gas outlet. Also disclosed is a chemical vapour deposition process using the disclosed apparatus.
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priorityDate 1988-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 27.