http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0358394-A3
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-015 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-015 |
| filingDate | 1989-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1990-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0358394-A3 |
| titleOfInvention | Infra-red radiation modulator |
| abstract | An infra red radiation modulator comprises a p type silicon nsubstrate 1 having spaced n type and p type doped regions 2,3 nhaving respective doping concentrations of approximately 10²⁰ nand 10¹⁶/cm³. A signal source 11 provides a bias voltage nbetween the doped regions 2,3 via electrodes 4 for modifying the nconcentration of free carriers in the substrate between the ndoped regions and therefore the response of the modulator to nincident infra red radiation. n By appropriate control of the bias voltage the modulator ncan be caused to modulate, chop, filter or spectrally scan the nincident radiation. |
| priorityDate | 1988-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 12.